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this is information on a product in full production. september 2013 docid15382 rev 6 1/21 2n2907ahr hi-rel 60 v, 0.6 a pnp transistor datasheet - production data figure 1. internal schematic diagram features ? hermetic packages ? escc and jans qualified ? european preferred part list eppl description the 2n2907ahr is a silicon planar pnp transistor specifically designed and housed in hermetic packages for aerospace and hi-rel applications. it is available in the jan qualification system (mil-prf19500 compliance) and in the escc qualification system (escc 5000 compliance). in case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. to-18 lcc-3 3 1 2 3 1 2 3 1 2 4 pin 4 in ub is connected to the metallic lid. ub parameter value bv ceo 60 v i c (max) 0.6 a h fe at 10 v - 150 ma > 100 table 1. device summary device qualification system agency specification package radiation level eppl JANS2N2907AUBx jans mil-prf-19500/291 ub - - 2n2907arubx escc 5202/001 ub 100 krad escc target 2n2907aub0xsw35 escc 5202/001 ub 100 krad sw - 2n2907aub0x escc 5202/001 ub - target soc2907arhrx escc 5202/001 lcc-3 100 krad escc yes soc2907asw35 escc 5202/001 lcc-3 100 krad sw - soc2907ahrb escc 5202/001 lcc-3 - yes 2n2907arhrx escc 5202/001 to-18 100 krad escc - 2n2907asw35 escc 5202/001 to-18 100 krad sw - 2n2907ahr escc 5202/001 to-18 - - www.st.com
contents 2n2907ahr 2/21 docid15382 rev 6 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 jans electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 escc electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.4 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6.1 date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6.2 documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid15382 rev 6 3/21 2n2907ahr electrical ratings 21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) -60 v v ceo collector-emitter voltage (i b = 0) -60 v v ebo emitter-base voltage (i c = 0) -5 v i c collector current for to-18 for lcc-3 and ub -0.6 -0.5 a a p tot total dissipation at t amb 25 c escc: to-18 lcc-3 and ub lcc-3 and ub (1) jans: ub total dissipation at t case 25 c escc: to-18 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 0.4 0.4 0.73 0.5 1.8 w total dissipation at t sp(is) = 25 c jans: ub 1 t stg storage temperature -65 to 200 c t j max. operating junction temperature 200 c table 3. thermal data symbol parameter lcc-3 ub to-18 unit r thjc thermal resistance junction-case (max) for jans - - c/w thermal resistance junction-case (max) for escc -97 rt hjsp(is) thermal resistance junction-solder pad (infinite sink) (max) for jans 90 - thermal resistance junction-solder pad (infinite sink) (max) for escc -- r thja thermal resistance junction-ambient (max) for jans 325 - thermal resistance junction-ambient (max) for escc 437 240 (1) 1. when mounted on a 15 x 15 x 0.6 mm ceramic substrate. 437
electrical characteristics 2n2907ahr 4/21 docid15382 rev 6 2 electrical characteristics (a) jans and escc version of the products are assembled and tested in compliance with the agency specification it is qualified in. the electrical characteristics of each version are provided in dedicated tables. t case = 25 c unless otherwise specified. 2.1 jans electrical characteristics a. for pnp type, voltage and current values are negative. table 4. jans electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 60 v - 10 a v cb = 50 v 10 na v cb = 50 v, t amb = 150 c 10 a i ces collector cut-off current (i e = 0) v ce = 50 v - 50 na i ebo emitter cut-off current (i c = 0) v eb = 5 v - 10 a v eb = 4 v 50 na v (br)ceo (1) collector-emitter breakdown voltage (i b = 0) i c = 10 ma 60 - v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma, i b = 15 ma - 0.4 v i c = 500 ma, i b = 50 ma 1.6 v v be(sat) (1) base-emitter saturation voltage i c = 150 ma, i b = 15 ma 0.6 1.3 v i c = 500 ma, i b = 50 ma 2.6 v h fe (1) dc current gain i c = 0.1 ma, v ce = 10 v 75 - i c = 1 ma, v ce = 10 v 100 450 i c = 10 ma, v ce = 10 v 100 i c = 150 ma, v ce = 10 v 100 300 i c = 500 ma, v ce = 10 v 50 i c = 10 ma, v ce = 10 v t amb = -55 c 50 h fe small signal current gain v ce = 20 v i c = 20 ma f = 100 mhz 2- v ce = 10 v, i c =1 ma f = 1 khz 100
docid15382 rev 6 5/21 2n2907ahr electrical characteristics 21 2.2 escc electrical characteristics c obo output capacitance (i e = 0) v cb = 10 v 100 khz f 1 mhz -8pf c ibo output capacitance (i e = 0) v eb = 2 v 100 khz f 1 mhz -30pf t on turn-on time v cc = 30 v, i c = 150 ma i b1 = 15 ma -45ns t off turn-off time v cc = 30 v, i c = 150 ma i b1 = -i b2 = 15 ma - 300 ns 1. pulsed duration = 300 s, duty cycle 2% table 4. jans electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit table 5. escc electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 50 v, v cb = 50 v, t amb = 150 c - 10 10 na a v (br)cbo collector-base breakdown voltage (i e = 0) i c = 10 a60-v v (br)ceo (1) collector-emitter breakdown voltage (i b = 0) i c = 10 ma 60 - v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 10 a5-v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma, i b = 15 ma - 0.4 v v be(sat) (1) base-emitter saturation voltage i c = 150 ma, i b = 15 ma 0.87 1.3 v h fe (1) dc current gain i c = 0.1 ma, v ce = 10 v 75 - i c = 10 ma, v ce = 10 v 100 i c = 150 ma, v ce = 10 v 100 300 i c = 500 ma, v ce = 10 v 50 h fe small signal current gain v ce = 20 v, i c = 20 ma f = 100 mhz 2- c obo output capacitance (i e = 0) v cb = 10 v 100 khz f 1 mhz -8pf
electrical characteristics 2n2907ahr 6/21 docid15382 rev 6 2.3 electrical characteristics (curves) t on turn-on time v cc = 30 v, i c = 150 ma i b1 = 15 ma -45ns t off turn-off time v cc = 30 v, i c = 150 ma i b1 = -i b2 = 15 ma - 300 ns 1. pulsed duration = 300 s, duty cycle 2 % table 5. escc electrical characteristics (continued) symbol parameter test conditions min. typ. max. unit figure 2. dc current gain (v ce = 1 v) figure 3. dc current gain (v ce = 10 v) figure 4. collector emitter saturation voltage figure 5. base emitter saturation voltage (h fe = 10) $0y $0y $0y $0y
docid15382 rev 6 7/21 2n2907ahr electrical characteristics 21 2.4 test circuits figure 6. jans saturated turn-on switching time test circuit figure 7. jans saturated turn-off switching time test circuit notes: 1. the rise time (t r ) of the applied pulse shall be 2.0 ns, duty cycle 2 percent and the generator source impedance shall be 50 ohms. 2. sampling oscilloscope: z in 100 k ohms, c in 12 pf, rise time 5 ns. notes: 1. the rise time (t r ) of the applied pulse shall be 2.0 ns, duty cycle 2 percent and the generator source impedance shall be 50 ohms. 2. sampling oscilloscope: z in 100 k ohms, c in 12 pf, rise time 5 ns.
electrical characteristics 2n2907ahr 8/21 docid15382 rev 6 figure 8. escc resistive load switching test circuit 1. fast electronic switch 2. non-inductive resistor
docid15382 rev 6 9/21 2n2907ahr radiation hardness assurance 21 3 radiation hardness assurance (b) the products guaranteed in radiation within the jans system fully comply with the mil- prf-19500/291 specification. the products guaranteed in radiation within the escc system fully comply with the escc 5202/001 and escc 22900 specifications. jans radiation assurance st jans parts guaranteed at 100 krad (si), tested, in full compliancy with the mil-prf- 19500 specification, specifically the group d, subgroup 2 inspection, between 50 and 300 rad/s. a brief summary is provided below: ? all test are performed in accordance to mil-prf-19500 and test method 1019 of mil-std-750 for total ionizing dose. each wafer of each lot is tested. the table below provides for each monitored parameters of the test conditions and the acceptance criteria b. for pnp type, voltage and current values are negative. table 6. mil-prf-19500 (test method 1019) post radiation electrical characteristics symbol parameter test conditions value unit min. max. i cbo collector to base cutoff current v cb = 60 20 a v cb = 50 v 20 na i ebo emitter to base cutoff current v eb = 5 v 20 a v eb = 4 v 100 na v (br)ceo breakdown voltage, collector to emitter i c = 10 ma 60 v i ces collector to emitter cutoff current v ce = 50 v 100 na h fe forward-current transfer ratio v ce = 10 v; i c = 0.1 ma [37.5] (1) 1. see method 1019 of mil-std-750 for how to determine [h fe ] by first calculating the delta (1/h fe ) from the pre- and post-radiation h fe . notice the [h fe ] is not the same as h fe and cannot be measured directly. the [h fe ] value can never exceed the pre-radiation minimum h fe that it is based upon. v ce = 10 v; i c = 1.0 ma [50] (1) 400 v ce = 10 v; i c = 10 ma [50] (1) v ce = 10 v; i c = 150 ma [50] (1) 300 v ce = 10 v; i c = 500 ma [25] (1) v ce(sat) collector-emitter saturation voltage i c = 150 ma; i b = 15 ma 0.46 v i c = 500 ma; i b = 50 ma 1.84 v be(sat) base-emitter saturation voltage i c = 150 ma; i b = 15 ma 0.6 1.5 v i c = 500 ma; i b = 50 ma 3
radiation hardness assurance 2n2907ahr 10/21 docid15382 rev 6 escc radiation assurance each product lot is tested according to the escc basic specification 22900, with a minimum of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as unirradiated sample, all of them being fully compliant with the applicable escc generic and/or detailed specification. st goes beyond the escc specification by performing the following procedure: ? test of 11 pieces by wafer, 5 biased at least 80% of v (br)ceo , 5 unbiased and 1 kept for reference ? irradiation at 0.1 rad (si)/s ? acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10 samples comply with the post radiation electrical characteristics provided in table 8 . delivery together with the parts of the radiation verification test (rvt) report of the particular wafer used to manufacture the products. this rvt includes the value of each parameter at 30, 50, 70 and 100 krad (si) and after 24 hour annealing at room temperature and after an additional 168 hour annealing at 100c. table 7. radiation summary radiation test 100 krad ?sw? 100 krad escc wafer test each each part tested 5 biased 5 biased + 5 unbiased dose rate 0.1 rad/s 0.1 rad/s acceptance fixed values (1) 1. part numbers with suffix "sw" have same pr e and post irradiation electrical characteristics. part number with suffix "sw35" have specific post irradiation electrical characteristics. mil-std-750 method 1019 displacement damage optional optional agency part number (ex) 5202/001/04 (2) 2. example of the 2n2907a in lcc-3 gold finish. 5202/001/04r (2) st part number (ex) soc2n2907asw35 (1) soc2n2907arhrg documents coc + rvt coc + rvt
docid15382 rev 6 11/21 2n2907ahr radiation hardness assurance 21 table 8. escc 5202/001r post radiation electrical characteristics symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 50 v - 10 na i ebo emitter cut-off current (i c = 0) v eb = 3 v - 10 na v (br)cbo collector-base breakdown voltage (i e = 0) i c = 10 a60-v v (br)ceo (1) 1. pulsed duration = 300 s, duty cycle 2% collector-emitter breakdown voltage (i b = 0) i c = 10 ma 60 - v v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 10 a5-v v ce(sat) (1) collector-emitter saturation voltage i c = 150 ma i b = 15 ma - 0.4 v v be(sat) (1) base-emitter saturation voltage i c = 150 ma i b = 15 ma 1.3 v [h fe ] (1) post irradiation gain calculation (2) 2. the post-irradiation gain calculation of [h fe ], made using h fe measurements from prior to and on completion of irradiation testing and after each anneali ng step if any, shall be as specified in milstd-750 method 1019. i c = 0.1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 500 ma v ce = 10 v [75] [100] [100] [50] - 300
radiation hardness assurance 2n2907ahr 12/21 docid15382 rev 6 table 9. 2n2907asw35 post radiation electrical characteristics symbol parameter test conditions min. typ. max. unit v (br)ceo collector-emitter breakdown voltage i c = 10 ma 60 - - v v (br)cbo collector-base breakdown voltage i e = 10 a 60 - - v v (br)ebo emitter-base breakdown voltage i e = 10 a5 --v i cex collector-emitter cut- off current v ce = 30 v, v eb = 500 mv - - 50 na i cbo collector-base cut-off current v cb = 50 v - - 10 na h fe1 (1) 1. @ 50 krad (si) forward-current transfer ratio v ce = 10 v, i c = 0.1 ma 50 - - - h fe1 (2) 2. @ 70 krad (si) v ce = 10 v, i c = 0.1 ma 42 - - - h fe2 v ce = 10 v, i c = 10 ma 100 - - - h fe3 v ce = 10 v, i c = 150 ma 100 - 300 - h fe4 v ce = 10v, i c = 500 ma 50 - - - v ce(sat) collector-emitter saturation voltage i c =150 ma, i b = 15 ma - - 400 mv v be(sat) base-emitter saturation voltage i c = 150 ma, i b = 15 ma - - 1.3 v
docid15382 rev 6 13/21 2n2907ahr package mechanical data 21 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 10. product mass summary package mass (g) ub 0.06 lcc-3 0.06 to-18 0.40
package mechanical data 2n2907ahr 14/21 docid15382 rev 6 figure 9. ub drawings table 11. ub mechanical data dim. mm. min. typ. max. a 1.16 1.42 c 0.46 0.51 0.56 d 0.56 0.76 0.96 e 0.92 1.02 1.12 f 1.95 2.03 2.11 g 2.92 3.05 3.18 i 2.41 2.54 2.67 j 0.42 0.57 0.72 k 1.37 1.52 1.67 l 0.41 0.51 0.61 m 2.46 2.54 2.62 n 1.81 1.91 2.01 r 0.20 r1 0.30 r2 0.56
docid15382 rev 6 15/21 2n2907ahr package mechanical data 21 figure 10. lcc-3 drawings table 12. lcc-3 mechanical data dim. mm. min. typ. max. a 1.16 1.42 c 0.45 0.50 0.56 d 0.60 0.76 0.91 e 0.91 1.01 1.12 f 1.95 2.03 2.11 g 2.92 3.05 3.17 i 2.41 2.54 2.66 j 0.42 0.57 0.72 k 1.37 1.52 1.67 l 0.40 0.50 0.60 m 2.46 2.54 2.62 n 1.80 1.90 2.00 r 0.30 2 1 3
package mechanical data 2n2907ahr 16/21 docid15382 rev 6 figure 11. to-18 drawings order codes table 13. to-18 mechanical data dim. mm. min. typ. max. a 12.7 b 0.49 d 5.3 e 4.9 f 5.8 g 2.54 h 1.2 i 1.16 l 45
order codes 2n2907ahr 17/21 docid15382 rev 6 5 order codes table 14. ordering information part number agency specification eppl quality level radiation level package lead finish marking (1) packing j2n2907aub1 - - engineering model jans - ub gold j2907aub1 wafflepack 2n2907aub1 - - engineering model escc - ub gold 2n2907aub1 wafflepack soc2907a - - engineering model escc - lcc-3 gold soc2907a wafflepack JANS2N2907AUBg mil-prf- 19500/291 - jans - ub gold js2907 wafflepack JANS2N2907AUBt mil-prf- 19500/291 - jans - ub solder dip js2907 wafflepack 2n2907arubg 5202/001/06r target escc 100 krad escc ub gold 520200106r wafflepack 2n2907arubt 5202/001/07r target escc 100 krad escc ub solder dip 520200107r wafflepack 2n2907aub06sw35 (2) 5202/001/06 - escc 100 krad sw ub gold 520200106 wafflepack 2n2907aub07sw35 (2) 5202/001/07 - escc 100 krad sw ub solder dip 520200107 wafflepack 2n2907aub06 5202/001/06 target escc - ub gold 520200106 wafflepack 2n2907aub07 5202/001/07 target escc - ub solder dip 520200107 wafflepack soc2907arhrg 5202/001/04r yes escc 100 krad escc lcc-3 gold 520200104r wafflepack soc2907arhrt 5202/001/05r yes escc 100 krad escc lcc-3 solder dip 520200105r wafflepack soc2907asw35 (2) 5202/001/04 or 05 (3) - escc 100 krad sw lcc-3 gold or solder dip 520200104 or 05 (3) wafflepack soc2907ahrb 5202/001/04 or 05 (3) yes escc - lcc-3 gold or solder dip 520200104 or 05 (3) wafflepack 2n2907arhrg 5202/001/01r - escc 100 krad escc to-18 gold 520200101r strip pack 2n2907arhrt 5202/001/02r - escc 100 krad escc to-18 solder dip 520200102r strip pack
2n2907ahr order codes docid15382 rev 6 18/21 contact st sales office for information about the specific conditions for: ? products in die form ? other jans quality levels ? tape and reel packing 2n2907asw35 (2) 5202/001/01 or 02 (3) - escc 100 krad sw to-18 gold or solder dip 520200101 or 02 (3) strip pack 2n2907ahr 5202/001/01 or 02 (3) - escc - to-18 gold or solder dip 520200101 or 02 (3) strip pack 1. specific marking only. the full marking includes in addition: for the engineering models : st logo, date code, country of or igin (fr). for escc flight parts : st logo, date code, country of origin (fr), esa logo, serial number of the part within the assembly lot. for jans flight parts : st logo, dat e code, country of origin (fr), manufacturer code (cstm), serial number of the part within the assembly lot. 2. not recommended for new design. 3. depending escc part number mentioned on the purchase order. table 14. ordering information (continued) part number agency specification eppl quality level radiation level package lead finish marking (1) packing
docid15382 rev 6 19/21 2n2907ahr shipping details 21 6 shipping details 6.1 date code date code xyywwz is structured as below table: 6.2 documentation table 15. date code xyywwz e m (escc & jans) 3 last two digits of the year week digits lot index in the week e s c c flight - j a n s f l i g h t (diffused in singapore) w table 16. documentation provided for each type of product quality level radiation level documentation engineering model - - jans flight - certificate of conformance jans flight 100 krad certificate of conformance 50 rad/s radiation verification test report escc flight - certificate of conformance escc flight 100 krad certificate of conformance 0.1 rad/s radiation verification test report
revision history 2n2907ahr 20/21 docid15382 rev 6 7 revision history table 17. document revision history date revision changes 09-feb-2009 1 initial release 05-jan-2010 2 modified table 1 on page 1 30-nov-2011 3 minor text changes in the document title and description on the coverpage 14-may-2012 4 new package inserted (ub). updated: ? table 1: device summary , table 2: absolute maximum ratings and table 3: thermal data . ? section 2: electrical characteristics and section 4: package mechanical data . added: ? section : order codes and section 6: shipping details . 03-jun-2013 5 added: ? new section radiation hardness assurance ? table 9 on page 12 ? corrected the revision number and dates of revision 3 18-sep-2013 6 updated table 1: device summary and section 5: order codes
docid15382 rev 6 21/21 2n2907ahr 21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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